John P. Myers
08-09-13, 02:57 AM
SEOUL, Korea – August 6, 2013 – Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry’s first three-dimensional (3D) Vertical NAND (V-NAND) flash memory, which breaks through the current scaling limit for existing NAND flash technology. Achieving gains in performance and area ratio, the new 3D V-NAND will be used for a wide range of consumer electronics and enterprise applications, including embedded NAND storage and solid state drives (SSDs).
By making this CTF layer three-dimensional, the reliability and speed of the NAND memory have improved sharply. The new 3D V-NAND shows not only an increase of a minimum of 2X to a maximum 10X higher reliability, but also twice the write performance over conventional 10nm-class floating gate NAND flash memory.
...have you seen how fast Samsung's SSDs are already? And now doubling the write performance? I'll take 3 SSDs packed with that stuff, please :D
Full article: http://www.samsung.com/us/news/21467
By making this CTF layer three-dimensional, the reliability and speed of the NAND memory have improved sharply. The new 3D V-NAND shows not only an increase of a minimum of 2X to a maximum 10X higher reliability, but also twice the write performance over conventional 10nm-class floating gate NAND flash memory.
...have you seen how fast Samsung's SSDs are already? And now doubling the write performance? I'll take 3 SSDs packed with that stuff, please :D
Full article: http://www.samsung.com/us/news/21467